Touch device

ABSTRACT

A touch device includes a first conducting layer, a second conducting layer, and a resistance reduction layer. The first conducting layer is insulated to the second conducting layer to form a touch sensing structure. The resistance reduction layer is coupled to the first conducting layer. A combination of the resistance reduction layer and the first conducting layer has a resistance that is less than an intrinsic resistance of the first conducting layer.

FIELD

The subject matter herein generally relates to a touch device.

BACKGROUND

A touch device, such as a mobile phone or a tablet PC, is more and morepopular in our life. A capacitive touch device usually includes a numberof touch sensors for detecting a touch operation applied on the touchdevice. However, in order to increase the resolution of the touchdevice, the number of touch sensors of the touch device become more andmore, and then a response speed of the touch device is adverselyaffected. Thus, a touch device with increased response speed is needed.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations of the present technology will now be described, by wayof example only, with reference to the attached figures, wherein:

FIG. 1 is an exploded, isometric view of an embodiment of a touchdevice.

FIG. 2 is a cross-sectional view of the touch device of FIG. 1, thetouch device includes a resistance reduction unit.

FIG. 3 is a top view of the resistance reduction unit of FIG. 2.

FIG. 4 is a top view of another embodiment of the resistance reductionunit of FIG. 2.

FIG. 5 is a cross-sectional view of a second embodiment of the touchdevice.

FIG. 6 is cross-sectional view of a third embodiment of the touchdevice.

DETAILED DESCRIPTION

It will be appreciated that for simplicity and clarity of illustration,where appropriate, reference numerals have been repeated among thedifferent figures to indicate corresponding or analogous elements. Inaddition, numerous specific details are set forth in order to provide athorough understanding of the embodiments described herein. However, itwill be understood by those of ordinary skill in the art that theembodiments described herein can be practiced without these specificdetails. In other instances, methods, procedures and components have notbeen described in detail so as not to obscure the related relevantfeature being described. Also, the description is not to be consideredas limiting the scope of the embodiments described herein. The drawingsare not necessarily to scale and the proportions of certain parts havebeen exaggerated to better illustrate details and features of thepresent disclosure.

Several definitions that apply throughout this disclosure will now bepresented.

The term “coupled” is defined as connected, whether directly orindirectly through intervening components, and is not necessarilylimited to physical connections. The connection can be such that theobjects are permanently connected or releasably connected. The term“outside” refers to a region that is beyond the outermost confines of aphysical object. The term “substantially” is defined to be essentiallyconforming to the particular dimension, shape or other word thatsubstantially modifies, such that the component need not be exact. Forexample, substantially cylindrical means that the object resembles acylinder, but can have one or more deviations from a true cylinder. Theterm “comprising,” when utilized, means “including, but not necessarilylimited to”; it specifically indicates open-ended inclusion ormembership in the so-described combination, group, series and the like.

Referring to FIG. 1, the touch device 1000 includes a display panel 1, atouch sensor assembly 2 and a resistance reduction layer 3. The displaypanel 1, such as a liquid crystal display panel, includes a firstsubstrate 11, a second substrate 12 and a liquid crystal layer 13. Thefirst substrate 11 is opposite to the second substrate 12. The liquidcrystal layer 13 is positioned between the first substrate 11 and thesecond substrate 12. The first substrate 11 includes a first substratum1101, a number of gate lines 1102, and a number of source lines 1103.The gate lines 1102 and the source lines 1103 are formed on the firstsubstratum 1101, and regions corresponding to the gate lines 1102 andthe source lines 1103 of the display panel 1 defines a light blockingarea A. The display panel 1 further includes a number of pixel units1104 outside of the light blocking area A. The second substrate 12includes a second substratum 1201.

The touch sensor assembly 2 includes a first conducting layer 21 and asecond conducting layer 22. The first conducting layer 21 is formed onthe first substratum 1101 and is on one side of the gate lines 1102 andthe source lines 1103 adjacent to the liquid crystal layer 13. Thesecond conducting layer 22 is insulated to the first conducting layer 21to form a touch sensing structure. The first conducting layer 21includes a number of touch sensors 211. The second conducting layer 22includes a number of touch sensors 221. The resistance reduction layer 3is formed on the first conducting layer 21 and is coupled to the firstconducting layer 21. The resistance reduction layer 3 includes a numberof resistance reduction units 31 coupled to the touch sensors 211. Eachof the touch sensors is coupled to at least one resistance reductionunit 31. The resistance reduction units 31 correspond to the lightblocking area A, thus the aperture ratio of the display panel 1 will notbe reduced. In this embodiment, the resistance reduction units 31correspond to the light block region A is defined by the gate lines1102.

FIG. 2 illustrates a cross-sectional view of a part of the touch device1000. The first substrate 11 further includes a number of thin filmtransistors 1105, a passivation layer 1106, and a number of pixelelectrodes 1107. The thin film transistors 1105 which serve as switchelements to selectively allow data signals of the source lines totransmit to corresponding to pixel electrodes 1107 are formed on thesubstratum 1101. The passivation layer 1106 covers the thin filmtransistors 1105. The first conducting layer 21 is insulated to the thinfilm transistors 1105. The pixel electrodes 1107 are insulated to thefirst conducting layer 21.

In the embodiment, the second substrate 12 includes a number of blackmatrixes 1202, and a number of color filter units 1203. The blackmatrixes 1202 and the color filter units 1203 serve as a color filter ofthe display panel 1. The color filter units 1203 include, for example,red filter units R, green filter units G, and blue filter units B. Theblack matrixes 1202 and the color filter units 1203 are formed on thesecond substratum 1201 adjacent to the liquid crystal layer 13. The redfilter units R, green filter units G and blue filter units B aredisposed between two adjacent black matrixes 1202 respectively.

In this embodiment, the display panel 1 is an In-Plane Switching (IPS)liquid crystal display panel or a Fringing Field Switching (FFS) liquidcrystal display panel. The first conducting layer 21 is alsosimultaneously serves as a common electrode of the display panel 1. Thefirst conducting layer 21 cooperating with the pixel electrodes 1107controls liquid crystal molecules 1301 of the liquid crystal layer 137.

The first conducting layer 21 is formed on the passivation layer 1106.The resistance reduction layer 3 is formed on the first conducting layer21. Each of the touch sensors 211 of the first conducting layer 21 iscoupled to at least one resistance reduction unit 31 of the resistancereduction layer 3. The display 1 further includes an insulation layer1108. The insulation layer 1108 covers the first conducting layer 21 andthe resistance reduction layer 3. The pixel electrode 1107 is formed onthe insulation layer 1108. A first hole 1116 is defined in thepassivation layer 1106. The first substrate 11 further includes aconnecting layer 1111. The connecting layer 1111 is coupled to the thinfilm transistor 1105 via the first hole 1116. A second hole 1117 isdefined in the insulation layer 1108. The pixel electrode 1107 iscoupled to the thin film transistor 1105 via the second hole 1117 andthe connecting layer 1111.

In the embodiment, the first conducting layer 21 and the pixel electrode1107 can be for example made of Indium Tin Oxide (ITO). The resistancereduction layer 3 and the connecting layer 1111 can be for example madeof metal. A combination of the resistance reduction layer 3 and thefirst conducting layer 21 having a resistance is less than an intrinsicresistance of the first conducting layer 21. Thus, the resistancereduction layer 3 reduces the resistance of the first conducting layer21, and the response speed of the touch device 1000 is increased.

Referring also to FIG. 3, an exemplary resistance reduction unit 31 isshown. The resistance reduction unit 31 is formed on the touch sensor211. The resistance reduction unit 31 includes a number of resistancereduction strips 311. In this embodiment, the resistance reductionstrips 311 include at least two first strips 3111 and two second strips3112. The first strips 3111 are parallel from each other. The two secondstrips 3112 are parallel from each other. The two ends of each firststrip 3111 are respectively coupled to the second strips 3112. The firststrips 3111 and the second strips 3112 are interleaved and gaps betweenthe resistance reduction strips 311 define a number of open areas 312.

Referring to FIG. 4, another exemplary resistance reduction unit 31 isshown. In this embodiment, the resistance reduction strips 311 includeat least two first strips 3111 and at least two second strips 3112. Theat least two strips 3111 and at least two second strips 3112 form a meshpattern. A width W of each of the first strips 3111 or the second strips3112 is in a range of 10 μm to 30 μm. A distance D of two adjacent firststrips 3111 or second strips 3112 is in a range of 100 μm to 300 μm.

Referring to FIG. 2, in this embodiment, the thin film transistor 1105is a Low Temperature Poly-Silicon (LTPS) thin film transistor. The thinfilm transistor 1105 includes a gate electrode 1105 a, a sourceelectrode 1105 b, a drain electrode 1105 c, and a channel layer 1105 d.The firs substrate 11 further includes a number of light shieldingportions 1112, a first isolation group 1113, a gate insulation layer1114, and a second isolation group 1115.

The light shielding portions 1112 are formed on the first substratum1101. The first isolation group 1113 is formed on the first substratum1101 and covers the light shielding portions 1112. The channel layer1105 d is formed on the first isolation group 1113. The gate insulationlayer 1114 covers the channel layer 1105 d. The gate electrode 1105 a isformed on the gate insulation layer 1114.

The second isolation group 1115 is formed on the gate electrode 1105 aand the gate insulation layer 1114. A third hole 1118 and a fourth hole1119 is defined on the second isolation group 1115 and the gateinsulation layer 1114. The fourth hole 1119 is opposite to the secondhole 1117. The source electrode 1105 b and the drain electrode 1105 care formed on the second isolation group 1115. The source electrode 1105b is coupled to the channel layer 1105 d via the third hole 1118. Thedrain electrode 1105 c is coupled to the channel layer 1105 d via thefourth hole 1119. The passivation layer 112 covers the second isolationgroup 1115, the source electrode 1105 b, and the drain electrode 1105 c.

The pixel electrode 1107 defines a number of first intervals 1109. Thefirst conducting layer 21 defines a number of second intervals 1110. Thefirst intervals 1109 and the second intervals 1110 are interlaced.

The resistance reduction layer 3 reduces the resistance of the firstconducting layer 21, and the response speed of the touch device 1000 isincreased.

FIG. 5 illustrates a cross-sectional view of a second embodiment of thetouch device 2000. Referring to FIG. 5, the touch device 2000 issubstantially the same with the touch device 1000 of the firstembodiment. But in the second embodiment, the resistance reduction layer6 is formed on the passivation layer 4106 and is covered by the firstconducting layer 51.

FIG. 6 illustrates a cross-sectional view of a third embodiment of thetouch device 3000. Referring to FIG. 6, the touch device 3000 issubstantially the same with the touch device 1000 of the firstembodiment. But in the third embodiment, the resistance reduction layer9 is formed on second conducting layer 82. The resistance reductionlayer 6 reduces the resistance of the second conducting layer 82, andthe response speed of the touch device 3000 is increased.

The embodiments shown and described above are only examples. Manydetails are often found in the art such as the other features of a touchdevice. Therefore, many such details are neither shown nor described.Even though numerous characteristics and advantages of the presenttechnology have been set forth in the foregoing description, togetherwith details of the structure and function of the present disclosure,the disclosure is illustrative only, and changes may be made in thedetail, especially in matters of shape, size and arrangement of theparts within the principles of the present disclosure up to, andincluding the full extent established by the broad general meaning ofthe terms used in the claims. It will therefore be appreciated that theembodiments described above may be modified within the scope of theclaims.

What is claimed is:
 1. A touch device, comprising: a first conductinglayer; a second conducting layer configured to insulate the firstconducting layer to form a touch sensing structure; and a resistancereduction layer coupled to the first conducting layer, a combination ofthe resistance reduction layer and the first conducting layer having aresistance that is less than an intrinsic resistance of the firstconducting layer.
 2. The touch device of claim 1, wherein the firstconducting layer comprises a number of touch sensors, the resistancereduction layer comprises a number of resistance reduction unit, andeach of the touch sensors couples to at least one of the resistancereduction units.
 3. The touch device of claim 2, wherein each of theresistance reduction units comprises a number of resistance reductionstrips, and the resistance reduction strips are interleaving and gapsbetween the resistance reduction strips define a number of open areas.4. The touch device of claim 3, wherein the resistance reduction stripscomprises at least two first strips parallel to each other and twosecond strips parallel to each other.
 5. The touch device of claim 4,wherein two ends of each first strip are respectively coupled to the twosecond strips.
 6. The touch device of claim 5, wherein a width of eachof the first strips or the second strips is in a range of 10 μm to 30μm, a distance of two adjacent first strips or second strips is in arange of 100 μm to 300 μm.
 7. The touch device of claim 4, wherein atleast two first strips and at least two second strips form a meshpattern.
 8. The touch device of claim 7, wherein a width of each of thefirst strips or the second strips is in a range of 10 μm to 30 μm, adistance of two adjacent first strips or second strips is in a range of100 μm to 300 μm.
 9. The touch device of claim 1, wherein the resistancereduction layer is formed on the first conducting layer.
 10. The touchdevice of claim 1, wherein the resistance reduction layer is made ofmetal, and the first conducting layer is made of Indium Tin Oxide. 11.The touch device of claim 1, wherein the touch device further comprisesa display panel, the display panel comprises a first substratum, anumber of gate lines, and a number of source lines, the gate lines andthe source lines are formed on the first substratum, and regionscorresponding to the gate lines and the source lines of the displaypanel defines a light blocking area.
 12. The touch device of claim 11,wherein the display panel further comprises a number of pixel unitsoutside of the light blocking area.
 13. The touch device of claim 12,wherein the first conducting layer and the resistance reduction layerare formed on the first substratum.
 14. The touch device of claim 13,wherein the display device further comprises a second substrate oppositeto the first substrate and a liquid layer sandwiching between the firstsubstrate and the second substrate, the first substrate furthercomprises a number of thin film transistors forming on the firstsubstrate, a passivation layer covers the thin film transistors, a pixelelectrode is insulating to the first conducting layer, and the thin filmtransistors are insulated to the first conducting layer.
 15. The touchdevice of claim 14, wherein the first conducting layer is formed on thepassivation and covers the resistance reduction layer.
 16. The touchdevice of claim 15, wherein the second substrate comprises a secondsubstratum, a number of black matrixes are formed on the secondsubstratum, a number of color filter units are formed on the secondsubstratum, and the second conducting layer is formed on the secondsubstratum.
 17. The touch device of claim 13, wherein the firstconducting layer simultaneously serves as a common electrode of thedisplay panel.
 18. The touch device of claim 16, wherein the firstsubstrate further comprises an insulation layer covering the firstconducting layer and the resistance reduction layer, and the pixelelectrode is formed on the insulation layer.
 19. A touch device,comprising: a first substrate comprising a plurality of thin filmtransistors and a first conducting layer; a second substrate oppositethe first substrate, the second substrate comprising: a color filter; asecond conducting layer configured to insulate the first conductinglayer to form a touch sensing structure; and a resistance reductionlayer coupled to the second conducting layer, a combination of theresistance reduction layer and the second conducting layer having aresistance that is less than an intrinsic resistance of the secondconducting layer; and a liquid crystal layer positioned between thefirst substrate and the second substrate.